Anatoly M. Strel’chuk
- Last known institution:
- Physicotechnical Institute
- ORCID:
- 0000-0001-5321-0237
3
h-index
0
i10-index
39
Citations
34
Works
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Citation overview
Publications (bars) and citations (line) by year
- Publications
- Citations
Citation history
Publication history
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Most-cited works
- Investigation of p-3C-SiC/n+-6H-SiC Heterojunctions with Low Doped p-3C-SiC Region20032 citations
- High-Quality 3C-SiC pn-Structures Created by Sublimation Epitaxy on a 6H-SiC Substrate20042 citations
- Influence of Gamma-Ray and Neutron Irradiation on Injection Characteristics of 4H-SiC pn Structures20052 citations
- Ion Implantation - Tool for Fabrication of Advanced 4H-SiC Devices20022 citations
- Doping of <i>n</i>-type 6H–SiC and 4H–SiC with defects created with a proton beam20001 citations
- Characterization of 3C-SiC/6H-SiC Heterostructures Grown by Vacuum Sublimation20031 citations
- Characteristics of 6H-SiC Bipolar JTE Diodes Realized by Sublimation Epitaxy and Al Implantation20041 citations
- Temperature Dependence of the Band-Edge Injection Electroluminescence of 3C-SiC pn Structure20071 citations
- Radiative and Radiationless Recombination Processes in 6H and 4H SiC Diodes and the Effect of Deep Centres19930 citations
- Deep Centres Appearing in 6H and 4H SiC after Proton Irradiation20000 citations