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Authors

A. É. Atamuratov

Last known institution:
Urgench State University
ORCID:
0000-0003-2173-3783
5
h-index
0
i10-index
62
Citations
37
Works
Trends over time

Performance over time

Citation overview

Publications (bars) and citations (line) by year

  • Publications
  • Citations
013450510152020172018201920202021202220232024202520262017: Publications 2, Citations 22018: Publications 2, Citations 12019: Publications 1, Citations 42020: Publications 3, Citations 42021: Publications 4, Citations 52022: Publications 3, Citations 132023: Publications 3, Citations 62024: Publications 2, Citations 62025: Publications 5, Citations 152026: Publications 1, Citations 5

Citation history

0510152020172018201920202021202220232024202520262017: Citations 22018: Citations 12019: Citations 42020: Citations 42021: Citations 52022: Citations 132023: Citations 62024: Citations 62025: Citations 152026: Citations 5

Publication history

0134520172018201920202021202220232024202520262017: Publications 22018: Publications 22019: Publications 12020: Publications 32021: Publications 42022: Publications 32023: Publications 32024: Publications 22025: Publications 52026: Publications 1

h-index evolution

Cumulative h-index by year

0134520172018201920202021202220232024202520262017: h-index 12018: h-index 12019: h-index 12020: h-index 22021: h-index 22022: h-index 32023: h-index 32024: h-index 32025: h-index 42026: h-index 5

Most-cited works

  1. Self-heating effect in nanoscale SOI Junctionless FinFET with different geometries20216 citations
  2. The Effect of the Fin Shape and Thickness of the Buried Oxide on the DIBL Effect in an SOI FinFET20186 citations
  3. Experimental Assessment of the Nonuniform Radiation-Induced Space-Charge Distribution in the Surface Region of Silicon20015 citations
  4. The Self-Heating Effect in Junctionless Fin Field-Effect Transistors Based on Silicon-on-Insulator Structures with Different Channel Shapes20215 citations
  5. Optimization of vertically stacked nanosheet FET immune to self-heating20235 citations
  6. Simulation of DIBL effect in 25 nm SOI-FinFET with the different body shapes20174 citations
  7. Influence of device geometry on electrical characteristics of a 10.7 nm SOI-FinFET20144 citations
  8. Detection of a charge built in the oxide layer of a metal-oxide-semiconductor field-effect transistor by lateral C-V measurement20074 citations
  9. Lateral Capacitance–Voltage Method of NanoMOSFET for Detecting the Hot Carrier Injection20203 citations
  10. Characterising lateral capacitance of MNOSFET with localised trapped charge in nitride layer20183 citations