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Authors

D. V. Saparov

Last known institution:
Academy of Sciences Republic of Uzbekistan
ORCID:
0000-0002-9282-9048
4
h-index
0
i10-index
50
Citations
24
Works
Trends over time

Performance over time

Citation overview

Publications (bars) and citations (line) by year

  • Publications
  • Citations
0134503581020162018201920202021202220232024202520262016: Publications 1, Citations 22018: Publications 0, Citations 22019: Publications 1, Citations 32020: Publications 1, Citations 32021: Publications 2, Citations 12022: Publications 2, Citations 62023: Publications 2, Citations 82024: Publications 5, Citations 72025: Publications 2, Citations 92026: Publications 0, Citations 1

Citation history

03581020162018201920202021202220232024202520262016: Citations 22018: Citations 22019: Citations 32020: Citations 32021: Citations 12022: Citations 62023: Citations 82024: Citations 72025: Citations 92026: Citations 1

Publication history

0134520162018201920202021202220232024202520262016: Publications 12018: Publications 02019: Publications 12020: Publications 12021: Publications 22022: Publications 22023: Publications 22024: Publications 52025: Publications 22026: Publications 0

h-index evolution

Cumulative h-index by year

0134520162018201920202021202220232024202520262016: h-index 22018: h-index 22019: h-index 22020: h-index 22021: h-index 32022: h-index 32023: h-index 32024: h-index 32025: h-index 42026: h-index 4

Most-cited works

  1. Investigation of the Crystallographic Perfection and Photoluminescence Spectrum of the Epitaxial Films of (Si2)1-x(GaP)x<a:math xmlns:a="http://www.w3.org/1998/Math/MathML" id="M1"> <a:mfenced open="(" close=")" separators="|"> <a:mrow> <a:mn>0</a:mn> <a:mo>≤</a:mo> <a:mi>x</a:mi> <a:mo>≤</a:mo> <a:mn>1</a:mn> </a:mrow> </a:mfenced> </a:math> Solid Solution, Grown on Si and GaP Substrates with the Crystallographic Orientation (111)20219 citations
  2. Structural Studies of the Epitaxial Layer of a Substitutional Solid Solution (GaAs)<sub>1−<i>x</i></sub>(ZnSe)<sub><i>x</i></sub> with Nanocrystals20198 citations
  3. Possibility of obtaining the (GaSb)1 − x (Si2) x films on silicon substrates by the method of liquid-phase epitaxy20098 citations
  4. Features of liquid-phase epitaxy of new solid solutions of (GaAs)1−y−z(Ge<sub>2</sub>)y(ZnSe)z and their photoelectric properties20226 citations
  5. Synthesis and characterization of (Si2)1−x−y (Ge2) x (GaAs) y continuous solid solutions20073 citations
  6. Spectral sensitivity of (Si2)1 − x (CdS)x solid solutions20073 citations
  7. Growing the solid solution of molekular substitution (GaAs)<sub>1-z</sub>(ZnSe)<sub>z</sub>20212 citations
  8. Liquid phase epitaxy of (Sn2)1−x(InSb)x solid solution layers20022 citations
  9. Effect of Diatomic Silicon Molecular Impurities on the Luminescent Properties of Semiconductor Solid Solutions20202 citations
  10. Processes of Current Transport in p-Si-n-(Si&lt;sub&gt;2&lt;/sub&gt;)&lt;sub&gt;1−&lt;/sub&gt;&lt;i&gt;&lt;sub&gt;y&lt;/sub&gt;&lt;/i&gt;&lt;sub&gt;−&lt;/sub&gt;&lt;i&gt;&lt;sub&gt;z&lt;/sub&gt;&lt;/i&gt;(GaP)&lt;i&gt;&lt;sub&gt;y&lt;/sub&gt;&lt;/i&gt;(ZnSe)&lt;i&gt;&lt;sub&gt;z&lt;/sub&gt;&lt;/i&gt; Heterostructure Produced by Liquid Phase Epitaxy20221 citations