M. U. Kalanov
- Last known institution:
- Academy of Sciences Republic of Uzbekistan
- ORCID:
- 0000-0003-2758-0781
5
h-index
0
i10-index
61
Citations
29
Works
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- Publications
- Citations
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Publication history
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Most-cited works
- Investigation of the Crystallographic Perfection and Photoluminescence Spectrum of the Epitaxial Films of (Si2)1-x(GaP)x<a:math xmlns:a="http://www.w3.org/1998/Math/MathML" id="M1"> <a:mfenced open="(" close=")" separators="|"> <a:mrow> <a:mn>0</a:mn> <a:mo>≤</a:mo> <a:mi>x</a:mi> <a:mo>≤</a:mo> <a:mn>1</a:mn> </a:mrow> </a:mfenced> </a:math> Solid Solution, Grown on Si and GaP Substrates with the Crystallographic Orientation (111)20219 citations
- Structural and some electrophysical properties of the solid solutions Si1 − x Sn x (0 ≤ x ≤ 0.04)20138 citations
- Growth of (GaAs)1 − x (ZnSe) x solid solution films and investigation of their structural and some photoelectric properties20118 citations
- Features of liquid-phase epitaxy of new solid solutions of (GaAs)1−y−z(Ge<sub>2</sub>)y(ZnSe)z and their photoelectric properties20226 citations
- Peculiarities of photosensitivity of n(GaAs)–p(GaAs)1–x–y (ZnSe) x (Ge2) y structures with quantum dots20156 citations
- Growth, structure, and properties of GaAs-based (GaAs)1–x–y (Ge2) x (ZnSe) y epitaxial films20165 citations
- Radiation-induced formation of ZnO nanoparticles on the ZnSe single-crystal surface20093 citations
- Formation of nanodefects in LiF crystals under gamma irradiation20063 citations
- Structure and photoelectric properties of Si1 − x Sn x epilayers20103 citations
- The influence of irradiation on the microhardness and photoluminescence of SiO220062 citations