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Journal

Technical Physics Letters

ISSN:
1063-7850
6
h-index
206
Citations
356
Works
0.00
2-year mean citedness

Trust signals

1 of 3 signals present

Independent positive signals — not a single “predatory/legitimate” verdict, but a converging picture.

  • DOAJ
    No data
    doaj.org
  • OAK list
    No data
    OAK
  • Valid ISSN
    Present
    ISSN

This is an information label, not an official ruling. A missing signal is not a penalty — a regional journal may simply not be in DOAJ.

Most-cited works

  1. Studying the Effect of Doping with Nickel on Silicon-Based Solar Cells with a Deep p–n-Junction201912 citations
  2. Thermal spikes observed during the tantalum sputtering by gold cluster ions200312 citations
  3. Injection photodiode based on p-CdTe film201211 citations
  4. Features of the behavior of lanthanum and hafnium atoms in silicon20069 citations
  5. Effect of electric field, illumination, and temperature on negative magnetoresistance of low-temperature-diffusion-doped silicon20108 citations
  6. The Effect of the Fin Shape and Thickness of the Buried Oxide on the DIBL Effect in an SOI FinFET20186 citations
  7. Developing Si(Li) nuclear radiation detectors by pulsed electric field treatment20096 citations
  8. The Effect of the Formation of Silicides on the Resistivity of Silicon20195 citations
  9. The Self-Heating Effect in Junctionless Fin Field-Effect Transistors Based on Silicon-on-Insulator Structures with Different Channel Shapes20215 citations
  10. Adsorption of Ba Atoms Influences the Composition, Emission, and Optical Properties of CdS Single Crystals20215 citations
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