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Journal

Physical Sciences and Technology

ISSN:
2409-6121
3
h-index
25
Citations
14
Works
0.43
2-year mean citedness

Trust signals

1 of 3 signals present

Independent positive signals — not a single “predatory/legitimate” verdict, but a converging picture.

  • DOAJ
    No data
    doaj.org
  • OAK list
    No data
    OAK
  • Valid ISSN
    Present
    ISSN

This is an information label, not an official ruling. A missing signal is not a penalty — a regional journal may simply not be in DOAJ.

Most-cited works

  1. Modeling and calibration of electrical features of p-n junctions based on Si and GaAs20249 citations
  2. Clusters of impurity nickel atoms and their migration in the crystal lattice of silicon20237 citations
  3. The High-temperature analysis of silicon properties with manganese-oxygen binary complexes20243 citations
  4. The Physical mechanisms of gettering properties of nickel clusters in silicon solar cells20242 citations
  5. Obtaining manganese silicide films on a silicon substrate by the diffusion method20222 citations
  6. Determination of the resistance of external parameters to the degradation of the parameters of silicon photocells with input nickel atoms20221 citations
  7. Optimal regime of the double-sided drift of lithium ions into silicon monocrystal20231 citations
  8. SN2017ein: bolometric light curve and physical parameters20170 citations
  9. The fundamental equation of the field theory in De Sitter pulse space20190 citations
  10. Diamond films obtained on silicone substrates by the CVD method and properties of structures based on them20230 citations
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