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Journal

Semiconductor Physics Quantum Electronics & Optoelectronics

ISSN:
1560-8034
2
h-index
17
Citations
16
Works

Trust signals

1 of 3 signals present

Independent positive signals — not a single “predatory/legitimate” verdict, but a converging picture.

  • DOAJ
    No data
    doaj.org
  • OAK list
    No data
    OAK
  • Valid ISSN
    Present
    ISSN

This is an information label, not an official ruling. A missing signal is not a penalty — a regional journal may simply not be in DOAJ.

Trends over time

Performance over time

Citation overview

Publications (bars) and citations (line) by year

  • Publications
  • Citations
01203581020102015201820192020202120222023202420252010: Publications 2, Citations 02015: Publications 1, Citations 02018: Publications 1, Citations 02019: Publications 1, Citations 02020: Publications 2, Citations 22021: Publications 0, Citations 22022: Publications 1, Citations 22023: Publications 0, Citations 72024: Publications 0, Citations 22025: Publications 0, Citations 1

Citation history

03581020102015201820192020202120222023202420252010: Citations 02015: Citations 02018: Citations 02019: Citations 02020: Citations 22021: Citations 22022: Citations 22023: Citations 72024: Citations 22025: Citations 1

Publication history

01220102015201820192020202120222023202420252010: Publications 22015: Publications 12018: Publications 12019: Publications 12020: Publications 22021: Publications 02022: Publications 12023: Publications 02024: Publications 02025: Publications 0

h-index evolution

Cumulative h-index by year

01220102015201820192020202120222023202420252010: h-index 12015: h-index 12018: h-index 12019: h-index 12020: h-index 12021: h-index 12022: h-index 12023: h-index 22024: h-index 22025: h-index 2

Most-cited works

  1. Clusters of nickel atoms and controlling their state in silicon lattice20189 citations
  2. Current-voltage characteristic of the injection photodetector based on In–n-CdS–p-Si–In structure20195 citations
  3. Effect of pressure on the characteristics of Schottky barrier diodes made of overcompensated semiconductor20102 citations
  4. Research of structures with corrugated photoreceiving surface20041 citations
  5. Influence of ion implantation and annealing on composition and structure of GaAs surface20020 citations
  6. Effect of microwave treatment on the parameters of Au-TiBx-GaAs(SiC 6H) surface-barrier structures20030 citations
  7. Features of growing epitaxial layers from solid solutions based on indium and aluminium arsenides20040 citations
  8. Spectroscopy of (Si2)1-x(ZnS)x solid solutions20050 citations
  9. p-n junctions obtained in (Ge2)x(GaAs)1–x varizone solid solutions by liquid phase epitaxy20050 citations
  10. hotoconverters with microrelief p-n junction on a basis of p-AlxGa1-xAs – p-GaAs – n-GaAs – n+-GaAs heterojunction20050 citations
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