Inorganic Materials
- ISSN:
- 0020-1685
7
h-index
151
Citations
68
Works
0.00
2-year mean citedness
Trust signals
1 of 3 signals presentIndependent positive signals — not a single “predatory/legitimate” verdict, but a converging picture.
- DOAJNo datadoaj.org
- OAK listNo dataOAK
- Valid ISSNPresentISSN
This is an information label, not an official ruling. A missing signal is not a penalty — a regional journal may simply not be in DOAJ.
Most-cited works
- Transport properties of silicon doped with manganese via low-temperature diffusion201124 citations
- A p-i-n Model of CdTe/CdS Heterostructures200511 citations
- Self-organization of nickel atoms in silicon201110 citations
- Ultrasonic annealing of surface states in the heterojunction of a p-Si/n-CdS/n +-CdS injection photodiode20149 citations
- Fabrication and Properties of nSi–pCdTe Heterojunctions20208 citations
- Formation of Complexes of Phosphorus and Boron Impurity Atoms in Silicon20228 citations
- Thermally Induced Deep Centers in Silicon Doped with Europium or Lanthanum20018 citations
- Properties of Passivating Coatings Based on Lead Borosilicate Glass20026 citations
- Current-voltage behavior of silicon containing nanoclusters of manganese atoms20146 citations
- Experimental Assessment of the Nonuniform Radiation-Induced Space-Charge Distribution in the Surface Region of Silicon20015 citations