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Journal

Technical Physics

ISSN:
1063-7842
10
h-index
350
Citations
133
Works
0.00
2-year mean citedness

Trust signals

1 of 3 signals present

Independent positive signals — not a single “predatory/legitimate” verdict, but a converging picture.

  • DOAJ
    No data
    doaj.org
  • OAK list
    No data
    OAK
  • Valid ISSN
    Present
    ISSN

This is an information label, not an official ruling. A missing signal is not a penalty — a regional journal may simply not be in DOAJ.

Most-cited works

  1. Optimum ion implantation and annealing conditions for stimulating secondary negative ion emission201119 citations
  2. Electron spectroscopy of the nanostructures created in Si, GaAs, and CaF2 surface layers using low-energy ion implantation201319 citations
  3. Formation of nanosize silicides films on the Si(111) and Si(100) surfaces by low-energy ion implantation201415 citations
  4. Analysis of the structure and properties of heterostructured nanofilms prepared by epitaxy and ion implantation methods201315 citations
  5. Composition and properties of nanoscale Si structures formed on the CoSi2/Si(111) surface by Ar+ ion bombardment201714 citations
  6. Structure and Properties of a Bilayer Nanodimensional CoSi2/Si/CoSi2/Si System Obtained by Ion Implantation201814 citations
  7. Effect of the O+2-ion bombardment on the TiN composition and structure201513 citations
  8. Electronic structure of Ga1–x Al x As nanostructures grown on the GaAs surface by ion implantation201513 citations
  9. Escape Depth of Secondary and Photoelectrons from CdTe Films with a Ba Film201912 citations
  10. Silicon with Magnetic Nanoclusters of Manganese Atoms as a New Ferromagnetic Material201910 citations
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