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ISSN:
0255-5476
2
h-index
40
Citations
86
Works
1.00
2-year mean citedness

Trust signals

1 of 3 signals present

Independent positive signals — not a single “predatory/legitimate” verdict, but a converging picture.

  • DOAJ
    No data
    doaj.org
  • OAK list
    No data
    OAK
  • Valid ISSN
    Present
    ISSN

This is an information label, not an official ruling. A missing signal is not a penalty — a regional journal may simply not be in DOAJ.

Most-cited works

  1. Investigation of Defect InP(001) Surface by Low Energy Ion Scаttering Spectroscopy20228 citations
  2. Treated Textile Electrostatic Properties Study20205 citations
  3. 4H-SiC Layers Grown by Liquid Phase Epitaxy on 4H-SiC Off-Axis Substrates20002 citations
  4. Electrical Characteristics of 4H-SiC pn Diode Grown by LPE Method20022 citations
  5. Investigation of p-3C-SiC/n+-6H-SiC Heterojunctions with Low Doped p-3C-SiC Region20032 citations
  6. High-Quality 3C-SiC pn-Structures Created by Sublimation Epitaxy on a 6H-SiC Substrate20042 citations
  7. Influence of Gamma-Ray and Neutron Irradiation on Injection Characteristics of 4H-SiC pn Structures20052 citations
  8. System Analysis and Simulation of the Process of Destructive Hydrogenization of Deasphaltisate of Heavy Oil20222 citations
  9. Ion Implantation - Tool for Fabrication of Advanced 4H-SiC Devices20022 citations
  10. Gettering Effect with Al Implanted into 4H-SiC CVD Epitaxial Layers20031 citations
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