Anatoly M. Strel’chuk

Наиболее цитируемые работы

1. Investigation of p-3C-SiC/n+-6H-SiC Heterojunctions with Low Doped p-3C-SiC Region20032 цит.
2. High-Quality 3C-SiC pn-Structures Created by Sublimation Epitaxy on a 6H-SiC Substrate20042 цит.
3. Influence of Gamma-Ray and Neutron Irradiation on Injection Characteristics of 4H-SiC pn Structures20052 цит.
4. Ion Implantation - Tool for Fabrication of Advanced 4H-SiC Devices20022 цит.
5. Doping of <i>n</i>-type 6H–SiC and 4H–SiC with defects created with a proton beam20001 цит.
6. Characterization of 3C-SiC/6H-SiC Heterostructures Grown by Vacuum Sublimation20031 цит.
7. Characteristics of 6H-SiC Bipolar JTE Diodes Realized by Sublimation Epitaxy and Al Implantation20041 цит.
8. Temperature Dependence of the Band-Edge Injection Electroluminescence of 3C-SiC pn Structure20071 цит.
9. Radiative and Radiationless Recombination Processes in 6H and 4H SiC Diodes and the Effect of Deep Centres19930 цит.
10. Deep Centres Appearing in 6H and 4H SiC after Proton Irradiation20000 цит.