A. É. Atamuratov

Наиболее цитируемые работы

1. Self-heating effect in nanoscale SOI Junctionless FinFET with different geometries20216 цит.
2. The Effect of the Fin Shape and Thickness of the Buried Oxide on the DIBL Effect in an SOI FinFET20186 цит.
3. Experimental Assessment of the Nonuniform Radiation-Induced Space-Charge Distribution in the Surface Region of Silicon20015 цит.
4. The Self-Heating Effect in Junctionless Fin Field-Effect Transistors Based on Silicon-on-Insulator Structures with Different Channel Shapes20215 цит.
5. Optimization of vertically stacked nanosheet FET immune to self-heating20235 цит.
6. Simulation of DIBL effect in 25 nm SOI-FinFET with the different body shapes20174 цит.
7. Influence of device geometry on electrical characteristics of a 10.7 nm SOI-FinFET20144 цит.
8. Detection of a charge built in the oxide layer of a metal-oxide-semiconductor field-effect transistor by lateral C-V measurement20074 цит.
9. Lateral Capacitance–Voltage Method of NanoMOSFET for Detecting the Hot Carrier Injection20203 цит.
10. Characterising lateral capacitance of MNOSFET with localised trapped charge in nitride layer20183 цит.