M. A. Makhmudov

Наиболее цитируемые работы

1. Injection photodiode based on an n-CdS/p-CdTe heterostructure201319 цит.
2. The study of factors that influence on the effectiveness of the photoconversion of n-CdS/p-CdTe heterostructures20167 цит.
3. Investigation of current-voltage characteristics of the n-CdS-p-CdTe structure with an extended layer of the intermediate solid solution20095 цит.
4. Growth and characterization of ZnxSn1−xSe films for use in thin film solar cells20194 цит.
5. Investigation of composition and current transport mechanism in polycrystalline thin film ultra violet Au–Zn x Cd1–x S–Mo-structure with narrow spectrum of photosensitivity20172 цит.
6. Microstructural, Optical, and Electrical Properties of Sb2Se3 Films Fabricated by the CMBD Method for Solar Cells20222 цит.
7. Morphology and Current Transport in a Thin-Film Polycrystalline Au–ZnxCd1–xS–Mo Structure with Wide Photosensitivity Range in the Ultraviolet and Visible Radiation Spectral Region20182 цит.
8. Current sensitivity and efficiency of a CdO-pCdTe-Mo structure at low light levels20111 цит.
9. The spectral photosensitivity distribution of photodetector on the basis of Zn x Cd 1-x Te solid solution20040 цит.
10. Some peculiarities of current-voltage characteristics of nCdS-pCdTe-heterostructures with intermediate layer of d ≅ 1 μ m20090 цит.