Д. А. Ташмухамедова

Наиболее цитируемые работы

1. On the synthesis of nanoscale phases of metal silicides in the near-surface region of silicon and the study of their electronic structures by passing light201721 цит.
2. Formation of nanodimensional structures on surfaces of GaAs and Si by means of ion implantation201420 цит.
3. Electron spectroscopy of the nanostructures created in Si, GaAs, and CaF2 surface layers using low-energy ion implantation201319 цит.
4. Energy spectra of SiO2 nanofilms formed on a silicon surface by ion implantation201516 цит.
5. Electronic structure and optical properties of CaF2 films under low energy Ba+ ion-implantation combined with annealing200016 цит.
6. Analysis of the structure and properties of heterostructured nanofilms prepared by epitaxy and ion implantation methods201315 цит.
7. Obtaining of epitaxial films of metal silicides by ion implantation and molecular beam epitaxy200314 цит.
8. Structure and electronic properties of nanoscale phases and nanofilms of metal silicides produced by ion implantation in combination with annealing201414 цит.
9. Applying low-energy ion implantation in the creation of nanocontacts on the surface of ultrathin semiconductor films201314 цит.
10. Electronic structure of Ga1–x Al x As nanostructures grown on the GaAs surface by ion implantation201513 цит.