А.С. Рысбаев

Наиболее цитируемые работы

1. The Influence of Structural Defects in Silicon on the Formation of Photosensitive Mn4Si7–Si❬Mn❭–Mn4Si7 and Mn4Si7–Si❬Mn❭–M Heterostructures201921 цит.
2. Formation and Electronic Structure of Barium-Monosilicide- and Barium-Disilicide Films202117 цит.
3. Formation of nanosize silicides films on the Si(111) and Si(100) surfaces by low-energy ion implantation201415 цит.
4. Effect of thermal and laser annealing on the atom distribution profiles in Si(111) implanted with P+ and B+ ions201712 цит.
5. Peculiarities of the electron structure of nanosized ion-implanted layers in silicon20149 цит.
6. On new two-dimensional structures produced on the Si (111) and Si (100) surface upon molecular-beam epitaxy of cobalt and silicon20113 цит.
7. Theoretical Explanation of the Effect of a Decrease in the Si(111) Plasmon Energy during the Implantation of Ions with a Large Dose20203 цит.
8. Influence of structural defects in silicon on formation of photosensitive heterostructures Mn4Si7-Si-Mn4Si7 and Mn4Si7-Si-M20183 цит.
9. Change of electrophysical properties of the Si(111) and Si(100) surface in the process of ion implantation and next annealing20192 цит.
10. Thin silicide films: producing and properties20042 цит.