Б. Э. Эгамбердиев

Наиболее цитируемые работы

1. Comparison of electron irradiation on the formation of surface defects in situ and post thin-film LiF/Si(111) deposition202113 цит.
2. Comparative research fluorine and colloidal aggregate formation on the surface lithium fluoride thin films during electronic, ionic and thermal treatments202310 цит.
3. Formation of defects on the surface of LiF crystals under irradiation with different ions mass20229 цит.
4. The effect of silicon-germanium microheterojunctions on the parameters of silicon solar cells20107 цит.
5. Effect of annealing on the crystal structure of the surface of silicon doped with Ni, Fe, and Co ions20156 цит.
6. Influence of the irradiation of ions of different mass on the formation of surface defects of lithium fluoride thin films20226 цит.
7. Influence of Doping with Rare Earth Elements on the Parameters of Silicon Photocells20226 цит.
8. The Result of Successive Exposure to Reverse and Forward Bias on the Electrophysical Characteristics of ZnO:Al/i-ZnO/CdS/CuIn1 – xGax(S, Se)2/Mo Structure Solar Cells20223 цит.
9. Manganese depth-concentration profiles in ion-implanted silicon studied by Rutherford backscattering20012 цит.
10. Defect Formation and Displacement of Atoms on the Surface of a LiF Crystal under Bombardment with Low-Energy Cesium Ions20242 цит.