A. Sh. Razzakov

Наиболее цитируемые работы

1. Liquid-phase epitaxy of solid solutions (Ge2)1−x(ZnSe)x200125 цит.
2. Investigation of the Crystallographic Perfection and Photoluminescence Spectrum of the Epitaxial Films of (Si2)1-x(GaP)x<a:math xmlns:a="http://www.w3.org/1998/Math/MathML" id="M1"> <a:mfenced open="(" close=")" separators="|"> <a:mrow> <a:mn>0</a:mn> <a:mo>≤</a:mo> <a:mi>x</a:mi> <a:mo>≤</a:mo> <a:mn>1</a:mn> </a:mrow> </a:mfenced> </a:math> Solid Solution, Grown on Si and GaP Substrates with the Crystallographic Orientation (111)20219 цит.
3. Features of liquid-phase epitaxy of new solid solutions of (GaAs)1−y−z(Ge₂)y(ZnSe)z and their photoelectric properties20226 цит.
4. Liquid phase epitaxy of (Sn2)1−x(InSb)x solid solution layers20022 цит.
5. The possibility of improving the structural perfection of the new heterojunctions GaAs-(Ge2)1− x(ZnSe)x, Ge-(Ge2)1−x(ZnSe)x, GaP-(Ge2)1−x (ZnSe)x, and Si-(Ge2)1−x(ZnSe)x19982 цит.
6. Liquid phase epitaxy of (GaAs)1−x(ZnSe)x solid solution layers from a lead-based solution melt20012 цит.
7. Liquid phase epitaxy of Ge1−xSnx semiconductor films20012 цит.
8. Growth of perfect-crystal Si-Si1−xGex-(Ge2)1−x(InP)x structures from the liquid phase19990 цит.
9. Growth of Ge1−xSnnx solid solutions from the liquid phase20010 цит.
10. Physico-Chemical Bases Cultivation Variable-gap Semiconductor Solid Solution Si1−xGex from the Liquid Phase20200 цит.