I. R. Bekpulatov

Наиболее цитируемые работы

1. Formation of n-type CoSi monosilicide film which can be used in instrumentation202222 цит.
2. The Influence of Structural Defects in Silicon on the Formation of Photosensitive Mn4Si7–Si❬Mn❭–Mn4Si7 and Mn4Si7–Si❬Mn❭–M Heterostructures201921 цит.
3. Formation and Electronic Structure of Barium-Monosilicide- and Barium-Disilicide Films202117 цит.
4. Obtaining of thin films of manganese silicides on a Si surface by the method of solid-phase deposition and investigation of their electronic structure202317 цит.
5. Formation of nanosize silicides films on the Si(111) and Si(100) surfaces by low-energy ion implantation201415 цит.
6. Effect of Deposition of Submonolayer Cs Coatings on the Density of Electronic States and Energy Band Parameters of CoSi2/Si(111)202213 цит.
7. Effect of thermal and laser annealing on the atom distribution profiles in Si(111) implanted with P+ and B+ ions201712 цит.
8. Method for additional purification of the surface of Si(111) single crystal201712 цит.
9. Investigation of Coatings Formed by Thermal Oxidation on Monocrystalline Silicon202412 цит.
10. Formation of thin Crsi ₂ films by the solid-phase ion-plasma method and their thermoelectric properties20249 цит.