Б.Г. Атабаев

Наиболее цитируемые работы

1. Procedure for determining defects in sputtered clusters of ionic crystals201614 цит.
2. Energy Threshold of the Atomic and Cluster Sputtering of Some Elements under Bombardment with Cs, Rb, and Na Ions201914 цит.
3. Kinetics of aggregations of F 2, F 3, X, and colloid centers in LiF/Si(111) films upon low-temperature annealing201311 цит.
4. Defect Formation on the Surface of ZnO Using Low-Energy Electrons202011 цит.
5. Target current spectroscopy of the alkali halides KCl, CsCl and KBr19946 цит.
6. Oxide film assisted dopant diffusion in silicon carbide20105 цит.
7. Nonequilibrium Diffusion of Boron in SiC at Low Temperatures20105 цит.
8. Influence of Defects on Low Temperature Diffusion of Boron in SiC20114 цит.
9. Negative secondary ion mass spectra under Cs+ ion bombardment of the p-SiC-〈B〉-surface20114 цит.
10. The emission of atomic and molecular ions under single and multiple-charged rare gas ion bombardment of LiF, KCl, SiC19951 цит.