Anatoly M. Strel’chuk

Энг кўп иқтибос қилинган асарлар

1. Investigation of p-3C-SiC/n+-6H-SiC Heterojunctions with Low Doped p-3C-SiC Region20032 иқтибос
2. High-Quality 3C-SiC pn-Structures Created by Sublimation Epitaxy on a 6H-SiC Substrate20042 иқтибос
3. Influence of Gamma-Ray and Neutron Irradiation on Injection Characteristics of 4H-SiC pn Structures20052 иқтибос
4. Ion Implantation - Tool for Fabrication of Advanced 4H-SiC Devices20022 иқтибос
5. Doping of <i>n</i>-type 6H–SiC and 4H–SiC with defects created with a proton beam20001 иқтибос
6. Characterization of 3C-SiC/6H-SiC Heterostructures Grown by Vacuum Sublimation20031 иқтибос
7. Characteristics of 6H-SiC Bipolar JTE Diodes Realized by Sublimation Epitaxy and Al Implantation20041 иқтибос
8. Temperature Dependence of the Band-Edge Injection Electroluminescence of 3C-SiC pn Structure20071 иқтибос
9. Radiative and Radiationless Recombination Processes in 6H and 4H SiC Diodes and the Effect of Deep Centres19930 иқтибос
10. Deep Centres Appearing in 6H and 4H SiC after Proton Irradiation20000 иқтибос