A. Yu. Leyderman

Энг кўп иқтибос қилинган асарлар

1. I–V characteristic of p-n structures based on a continuous solid solutions (Si2)1 − xx (CdS) x200913 иқтибос
2. Study of the current-voltage characteristic of the n-CdS/p-CdTe heterostructure depending on temperature20108 иқтибос
3. Possibility of obtaining the (GaSb)1 − x (Si2) x films on silicon substrates by the method of liquid-phase epitaxy20098 иқтибос
4. The thermovoltaic effect in variband solid solution Si1–x Ge x (0 ≤ x ≤ 1)20164 иқтибос
5. Effect of Injection Depletion in p-Si–n-(Si2)1 –x(ZnSe)x (0 ≤ x ≤ 0.01) Heterostructure20184 иқтибос
6. Features of polycrystalline silicon fabricated by fivefold remelting in a solar furnace20102 иқтибос
7. Processes of Current Transport in p-Si-n-(Si<sub>2</sub>)<sub>1−</sub><i><sub>y</sub></i><sub>−</sub><i><sub>z</sub></i>(GaP)<i><sub>y</sub></i>(ZnSe)<i><sub>z</sub></i> Heterostructure Produced by Liquid Phase Epitaxy20221 иқтибос
8. Determining certain physical settings of photocells20110 иқтибос
9. Recombination statistics of non-equilibrium carriers in the model of semiconductor with donor-acceptor pairs possessing variable recombination activity20200 иқтибос
10. Номсиз асар20200 иқтибос