Khomidkhodzha Kholikov

Энг кўп иқтибос қилинган асарлар

1. I–V characteristic of p-n structures based on a continuous solid solutions (Si2)1 − xx (CdS) x200913 иқтибос
2. Thermovoltaic properties of technical silicon melted by solar radiation200711 иқтибос
3. Possibility of obtaining the (GaSb)1 − x (Si2) x films on silicon substrates by the method of liquid-phase epitaxy20098 иқтибос
4. Synthesis and characterization of (Si2)1−x−y (Ge2) x (GaAs) y continuous solid solutions20073 иқтибос
5. Spectral sensitivity of (Si2)1 − x (CdS)x solid solutions20073 иқтибос
6. Growth and photosensitivity of pSi-n(GaSb)1 − x (Si2) x structures20071 иқтибос
7. Photosensitivity of pSi-n(GaSb)1 − x − y (Si2) x (GaAs) y , pSi-n(GaSb)1 − x − y (Si2) x (GaAs) y ,-n(GaSb) structures20081 иқтибос
8. Thermovoltaic properties of technical silicon melted by solar radiation20071 иқтибос