A. É. Atamuratov

Энг кўп иқтибос қилинган асарлар

1. Self-heating effect in nanoscale SOI Junctionless FinFET with different geometries20216 иқтибос
2. The Effect of the Fin Shape and Thickness of the Buried Oxide on the DIBL Effect in an SOI FinFET20186 иқтибос
3. Experimental Assessment of the Nonuniform Radiation-Induced Space-Charge Distribution in the Surface Region of Silicon20015 иқтибос
4. The Self-Heating Effect in Junctionless Fin Field-Effect Transistors Based on Silicon-on-Insulator Structures with Different Channel Shapes20215 иқтибос
5. Optimization of vertically stacked nanosheet FET immune to self-heating20235 иқтибос
6. Simulation of DIBL effect in 25 nm SOI-FinFET with the different body shapes20174 иқтибос
7. Influence of device geometry on electrical characteristics of a 10.7 nm SOI-FinFET20144 иқтибос
8. Detection of a charge built in the oxide layer of a metal-oxide-semiconductor field-effect transistor by lateral C-V measurement20074 иқтибос
9. Lateral Capacitance–Voltage Method of NanoMOSFET for Detecting the Hot Carrier Injection20203 иқтибос
10. Characterising lateral capacitance of MNOSFET with localised trapped charge in nitride layer20183 иқтибос