Ш. А. Мирсагатов

Энг кўп иқтибос қилинган асарлар

1. Injection photodiode based on an n-CdS/p-CdTe heterostructure201319 иқтибос
2. Mechanism of current transport in Schottky barrier diodes based on coarse-grained CdTe films201216 иқтибос
3. A p-i-n Model of CdTe/CdS Heterostructures200511 иқтибос
4. Injection photodiode based on p-CdTe film201211 иқтибос
5. Mechanism of charge transfer in n-CdS/p-CdTe heterojunctions200710 иқтибос
6. Ultrasonic annealing of surface states in the heterojunction of a p-Si/n-CdS/n +-CdS injection photodiode20149 иқтибос
7. Study of the current-voltage characteristic of the n-CdS/p-CdTe heterostructure depending on temperature20108 иқтибос
8. Mechanism of charge transfer in injection photodetectors based on the M(In)-n-CdS-p-Si-M(In) structure20158 иқтибос
9. Fabrication and Properties of nSi–pCdTe Heterojunctions20208 иқтибос
10. Mechanism of charge transfer in n-CdS/p-CdTe heterostructures with a thick layer of the CdTe1 − x S x solid solution20086 иқтибос