M. A. Makhmudov
- Сўнгги маълум муассаса:
- Academy of Sciences Republic of Uzbekistan
- ORCID:
- 0000-0001-7627-4890
4
h-индекс
1
i10-индекси
48
Иқтибослар
19
Асарлар
Вақт бўйича
Вақт бўйича таҳлил
Иқтибос шарҳи
Йиллар бўйича нашрлар (устун) ва иқтибослар (чизиқ)
- Нашрлар
- Иқтибослар
Иқтибос тарихи
Нашр тарихи
h-индекс эволюцияси
Йиллар бўйича жамланган h-индекс
Энг кўп иқтибос қилинган асарлар
- Injection photodiode based on an n-CdS/p-CdTe heterostructure201319 иқтибос
- The study of factors that influence on the effectiveness of the photoconversion of n-CdS/p-CdTe heterostructures20167 иқтибос
- Investigation of current-voltage characteristics of the n-CdS-p-CdTe structure with an extended layer of the intermediate solid solution20095 иқтибос
- Growth and characterization of ZnxSn1−xSe films for use in thin film solar cells20194 иқтибос
- Investigation of composition and current transport mechanism in polycrystalline thin film ultra violet Au–Zn x Cd1–x S–Mo-structure with narrow spectrum of photosensitivity20172 иқтибос
- Microstructural, Optical, and Electrical Properties of Sb2Se3 Films Fabricated by the CMBD Method for Solar Cells20222 иқтибос
- Morphology and Current Transport in a Thin-Film Polycrystalline Au–ZnxCd1–xS–Mo Structure with Wide Photosensitivity Range in the Ultraviolet and Visible Radiation Spectral Region20182 иқтибос
- Current sensitivity and efficiency of a CdO-pCdTe-Mo structure at low light levels20111 иқтибос
- The spectral photosensitivity distribution of photodetector on the basis of Zn x Cd 1-x Te solid solution20040 иқтибос
- Some peculiarities of current-voltage characteristics of nCdS-pCdTe-heterostructures with intermediate layer of d ≅ 1 μ m20090 иқтибос