Kh. Kh. Boltaev

Энг кўп иқтибос қилинган асарлар

1. Electron spectroscopy of the nanostructures created in Si, GaAs, and CaF2 surface layers using low-energy ion implantation201319 иқтибос
2. Structure and electronic properties of nanoscale phases and nanofilms of metal silicides produced by ion implantation in combination with annealing201414 иқтибос
3. Influence of ion bombardment on the profile of the depth distribution of impurity atoms in Si used for solar cells and diode structures20148 иқтибос
4. Composition and Structure of Ga1 – xNa x As Nanolayers Produced near the GaAs Surface by Na+ Implantation20177 иқтибос
5. Composition of uncontrolled impurities and their chemical states and depth profiles at the Al-Si interface20153 иқтибос
6. Injectivity and Nuclearity Properties for Real C*-Algebras20241 иқтибос
7. Analyzing the Change in the Composition of a CdTe Surface upon Implanting $$O_{2}^{ + }$$ Ions and Subsequent Annealing20241 иқтибос
8. Injectivity and Nuclearity Properties for Real C*-Algebras20210 иқтибос
9. Study of the Composition of Uncontrolled Impurities and the Profiles of Their Distribution at the Ni–CdS Interface20220 иқтибос
10. THE RELATION BETWEEN REAL AW*-FACTORS AND ANTI-AUTOMORPHISMS OF INVOLUTIVE (I.E. WITH PERIOD 2) *-(COMPLEX) AW*-FACTORS20250 иқтибос