A. K. Tashatov

Энг кўп иқтибос қилинган асарлар

1. Effect of Ar+-ion bombardment on the composition and structure of the surface of CoSi2/Si(111) nanofilms201523 иқтибос
2. Analysis of the structure and properties of heterostructured nanofilms prepared by epitaxy and ion implantation methods201315 иқтибос
3. Study of the Influence of Implanted Atoms on the Coefficients of the Sputtering of Silicon and Silicon with a Thin Oxide Film20185 иқтибос
4. Effect of the Disordering of Thin Surface Layers on the Electronic and Optical Properties of Si(111)20204 иқтибос
5. On new two-dimensional structures produced on the Si (111) and Si (100) surface upon molecular-beam epitaxy of cobalt and silicon20113 иқтибос
6. Theoretical Explanation of the Effect of a Decrease in the Si(111) Plasmon Energy during the Implantation of Ions with a Large Dose20203 иқтибос
7. Surface Morphology of NiSi2/Si Films Obtained by the Method of Solid-Phase Deposition20203 иқтибос
8. Electronic and Optical Properties of NiSi2/Si Nanofilms20193 иқтибос
9. Comparison of parameters of heteroepitaxial structures20201 иқтибос
10. High-Sensitivity Temperature Sensor on the Basis of Single-Crystal Si(111) Implanted from Multiple Directions with P+ and B+ Ions20201 иқтибос