I. G. Atabaev
- Сўнгги маълум муассаса:
- Academy of Sciences Republic of Uzbekistan
- ORCID:
- 0000-0002-5544-1108
4
h-индекс
0
i10-индекси
60
Иқтибослар
27
Асарлар
Вақт бўйича
Вақт бўйича таҳлил
Иқтибос шарҳи
Йиллар бўйича нашрлар (устун) ва иқтибослар (чизиқ)
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- Иқтибослар
Иқтибос тарихи
Нашр тарихи
h-индекс эволюцияси
Йиллар бўйича жамланган h-индекс
Энг кўп иқтибос қилинган асарлар
- High-strength glass-ceramic materials synthesized in a large solar furnace20156 иқтибос
- Oxide film assisted dopant diffusion in silicon carbide20105 иқтибос
- Influence of Defects on Low Temperature Diffusion of Boron in SiC20114 иқтибос
- Negative secondary ion mass spectra under Cs+ ion bombardment of the p-SiC-〈B〉-surface20114 иқтибос
- Fast Switching 4<i>H</i>-SiC<i> P-i-n</i> Structures Fabricated by Low Temperature Diffusion of Al20174 иқтибос
- Growth of transparent electrical conducting films of indium and tin oxides by chemical vapor deposition20164 иқтибос
- The effects of the solar radiant flux density on the properties of pyroceramic materials20144 иқтибос
- Modernization of an automated controlling system for heliostat field of big solar furnace20164 иқтибос
- Bulk Si1−xGex single- and poly-crystals: a new prospective material for electronics20013 иқтибос
- Research of <i>p</i>‐<i>i</i>‐<i>n</i> Junctions Based on 4<i>H</i>‐SiC Fabricated by Low‐Temperature Diffusion of Boron20182 иқтибос