Б. Э. Эгамбердиев
- Сўнгги маълум муассаса:
- Tashkent State Higher School of National Dance and Choreography
- ORCID:
- 0000-0002-8042-9485
6
h-индекс
2
i10-индекси
67
Иқтибослар
19
Асарлар
Вақт бўйича
Вақт бўйича таҳлил
Иқтибос шарҳи
Йиллар бўйича нашрлар (устун) ва иқтибослар (чизиқ)
- Нашрлар
- Иқтибослар
Иқтибос тарихи
Нашр тарихи
h-индекс эволюцияси
Йиллар бўйича жамланган h-индекс
Энг кўп иқтибос қилинган асарлар
- Comparison of electron irradiation on the formation of surface defects in situ and post thin-film LiF/Si(111) deposition202113 иқтибос
- Comparative research fluorine and colloidal aggregate formation on the surface lithium fluoride thin films during electronic, ionic and thermal treatments202310 иқтибос
- Formation of defects on the surface of LiF crystals under irradiation with different ions mass20229 иқтибос
- The effect of silicon-germanium microheterojunctions on the parameters of silicon solar cells20107 иқтибос
- Effect of annealing on the crystal structure of the surface of silicon doped with Ni, Fe, and Co ions20156 иқтибос
- Influence of the irradiation of ions of different mass on the formation of surface defects of lithium fluoride thin films20226 иқтибос
- Influence of Doping with Rare Earth Elements on the Parameters of Silicon Photocells20226 иқтибос
- The Result of Successive Exposure to Reverse and Forward Bias on the Electrophysical Characteristics of ZnO:Al/i-ZnO/CdS/CuIn1 – xGax(S, Se)2/Mo Structure Solar Cells20223 иқтибос
- Manganese depth-concentration profiles in ion-implanted silicon studied by Rutherford backscattering20012 иқтибос
- Defect Formation and Displacement of Atoms on the Surface of a LiF Crystal under Bombardment with Low-Energy Cesium Ions20242 иқтибос