D. V. Saparov

Энг кўп иқтибос қилинган асарлар

1. Investigation of the Crystallographic Perfection and Photoluminescence Spectrum of the Epitaxial Films of (Si2)1-x(GaP)x<a:math xmlns:a="http://www.w3.org/1998/Math/MathML" id="M1"> <a:mfenced open="(" close=")" separators="|"> <a:mrow> <a:mn>0</a:mn> <a:mo>≤</a:mo> <a:mi>x</a:mi> <a:mo>≤</a:mo> <a:mn>1</a:mn> </a:mrow> </a:mfenced> </a:math> Solid Solution, Grown on Si and GaP Substrates with the Crystallographic Orientation (111)20219 иқтибос
2. Structural Studies of the Epitaxial Layer of a Substitutional Solid Solution (GaAs)_1−<i>x</i>(ZnSe)_<i>x</i> with Nanocrystals20198 иқтибос
3. Possibility of obtaining the (GaSb)1 − x (Si2) x films on silicon substrates by the method of liquid-phase epitaxy20098 иқтибос
4. Features of liquid-phase epitaxy of new solid solutions of (GaAs)1−y−z(Ge₂)y(ZnSe)z and their photoelectric properties20226 иқтибос
5. Synthesis and characterization of (Si2)1−x−y (Ge2) x (GaAs) y continuous solid solutions20073 иқтибос
6. Spectral sensitivity of (Si2)1 − x (CdS)x solid solutions20073 иқтибос
7. Growing the solid solution of molekular substitution (GaAs)_1-z(ZnSe)_z20212 иқтибос
8. Liquid phase epitaxy of (Sn2)1−x(InSb)x solid solution layers20022 иқтибос
9. Effect of Diatomic Silicon Molecular Impurities on the Luminescent Properties of Semiconductor Solid Solutions20202 иқтибос
10. Processes of Current Transport in p-Si-n-(Si&lt;sub&gt;2&lt;/sub&gt;)&lt;sub&gt;1−&lt;/sub&gt;&lt;i&gt;&lt;sub&gt;y&lt;/sub&gt;&lt;/i&gt;&lt;sub&gt;−&lt;/sub&gt;&lt;i&gt;&lt;sub&gt;z&lt;/sub&gt;&lt;/i&gt;(GaP)&lt;i&gt;&lt;sub&gt;y&lt;/sub&gt;&lt;/i&gt;(ZnSe)&lt;i&gt;&lt;sub&gt;z&lt;/sub&gt;&lt;/i&gt; Heterostructure Produced by Liquid Phase Epitaxy20221 иқтибос