Kh. N. Juraev
Исм вариантлари: Kh.N. Juraev · Khimmatali Juraev
- Сўнгги маълум муассаса:
- Tashkent Institute of Irrigation and Agricultural Mechanization Engineers
- ORCID:
- 0000-0001-8963-3848
5
h-индекс
1
i10-индекси
60
Иқтибослар
27
Асарлар
Вақт бўйича
Вақт бўйича таҳлил
Иқтибос шарҳи
Йиллар бўйича нашрлар (устун) ва иқтибослар (чизиқ)
- Нашрлар
- Иқтибослар
Иқтибос тарихи
Нашр тарихи
h-индекс эволюцияси
Йиллар бўйича жамланган h-индекс
Энг кўп иқтибос қилинган асарлар
- Energy Levels in Nanowires and Nanorods with a Finite Potential Well202011 иқтибос
- Theoretical analysis of incomplete ionization on the electrical behavior of radial <i>p-n</i> junction structures20259 иқтибос
- Peculiarities of the Temperature Dependence of the Chemical Potential of a Two-dimensional Electron Gas in Magnetic Field20228 иқтибос
- Concentration, thermodynamic density of states, and entropy of electrons in semiconductor nanowires20227 иқтибос
- Nonequilibrium Diffusion of Boron in SiC at Low Temperatures20105 иқтибос
- Influence of Defects on Low Temperature Diffusion of Boron in SiC20114 иқтибос
- Fast Switching 4<i>H</i>-SiC<i> P-i-n</i> Structures Fabricated by Low Temperature Diffusion of Al20174 иқтибос
- Growth of transparent electrical conducting films of indium and tin oxides by chemical vapor deposition20164 иқтибос
- Research of <i>p</i>‐<i>i</i>‐<i>n</i> Junctions Based on 4<i>H</i>‐SiC Fabricated by Low‐Temperature Diffusion of Boron20182 иқтибос
- Spectral Dependence of Optical Absorption of 4<i>H</i>-SiC Doped with Boron and Aluminum20181 иқтибос