А. С. Саидов

Энг кўп иқтибос қилинган асарлар

1. Liquid-phase epitaxy of solid solutions (Ge2)1−x(ZnSe)x200125 иқтибос
2. I–V characteristic of p-n structures based on a continuous solid solutions (Si2)1 − xx (CdS) x200913 иқтибос
3. Thermovoltaic properties of technical silicon melted by solar radiation200711 иқтибос
4. Investigation of the Crystallographic Perfection and Photoluminescence Spectrum of the Epitaxial Films of (Si2)1-x(GaP)x<a:math xmlns:a="http://www.w3.org/1998/Math/MathML" id="M1"> <a:mfenced open="(" close=")" separators="|"> <a:mrow> <a:mn>0</a:mn> <a:mo>≤</a:mo> <a:mi>x</a:mi> <a:mo>≤</a:mo> <a:mn>1</a:mn> </a:mrow> </a:mfenced> </a:math> Solid Solution, Grown on Si and GaP Substrates with the Crystallographic Orientation (111)20219 иқтибос
5. Growth of (InSb)1 − x (Sn2) x films on GaAs substrates by liquid-phase epitaxy20109 иқтибос
6. Structural and some electrophysical properties of the solid solutions Si1 − x Sn x (0 ≤ x ≤ 0.04)20138 иқтибос
7. Photothermovoltaic Effect in p-Si−n-(Si2)1 –x–y(Ge2)x(ZnSe)y Structure20198 иқтибос
8. Structural Studies of the Epitaxial Layer of a Substitutional Solid Solution (GaAs)_1−<i>x</i>(ZnSe)_<i>x</i> with Nanocrystals20198 иқтибос
9. Growth of (GaAs)1 − x (ZnSe) x solid solution films and investigation of their structural and some photoelectric properties20118 иқтибос
10. Possibility of obtaining the (GaSb)1 − x (Si2) x films on silicon substrates by the method of liquid-phase epitaxy20098 иқтибос