Jo`shqin Abdullayev
Исм вариантлари: J.SH. Abdullayev · Jo‘shqin Sh. Abdullayev
- Сўнгги маълум муассаса:
- National University of Uzbekistan
- ORCID:
- 0000-0001-6110-6616
7
h-индекс
3
i10-индекси
95
Иқтибослар
15
Асарлар
Вақт бўйича
Вақт бўйича таҳлил
Иқтибос шарҳи
Йиллар бўйича нашрлар (устун) ва иқтибослар (чизиқ)
- Нашрлар
- Иқтибослар
Иқтибос тарихи
Нашр тарихи
h-индекс эволюцияси
Йиллар бўйича жамланган h-индекс
Энг кўп иқтибос қилинган асарлар
- Optimization of The Influence of Temperature on The Electrical Distribution of Structures with Radial p-n Junction Structures202414 иқтибос
- Factors Influencing the Ideality Factor of Semiconductor p-n and p-i-n Junction Structures at Cryogenic Temperatures202410 иқтибос
- Influence of the parameters to transition capacitance at NCDS-PSI heterostructure20239 иқтибос
- Modeling and calibration of electrical features of p-n junctions based on Si and GaAs20249 иқтибос
- Theoretical analysis of incomplete ionization on the electrical behavior of radial <i>p-n</i> junction structures20259 иқтибос
- Analytic Analysis of the Features of GaAs/Si Radial Heterojunctions: Influence of Temperature and Concentration20257 иқтибос
- Influence of Linear Doping Profiles on the Electrophysical Features of p-n Junctions20257 иқтибос
- Mathematical Analysis of the Features of Radial p-n Junction: Influence of Temperature and Concentration20255 иқтибос
- The Role of Recombination Types in Efficiency Limits of Radial p n junctions based on Si and GaAs20255 иқтибос
- Modeling of Optoelectronic Properties in pSi/n-CdmZn1−mS Heterojunctions: Effects of Composition and Temperature20253 иқтибос