Journal of Surface Investigation X-ray Synchrotron and Neutron Techniques
- ISSN:
- 1027-4510
12
h-индекс
389
Иқтибослар
110
Асарлар
0.00
2-йиллик ўртача иқтибос
Ишонч сигналлари
1 дан 3 сигнал мавжудМустақил ижобий сигналлар — ягона “предатор/қонуний” ҳукми эмас, балки яқинлашувчи тасвир.
- DOAJМаълумот йўқdoaj.org
- ОАК рўйхатиМаълумот йўқОАК
- Яроқли ISSNМавжудISSN
Бу ахборот ёрлиғи, расмий қарор эмас. Сигнал йўқлиги жазо эмас — масалан, минтақавий журнал DOAJ'да бўлмаслиги мумкин.
Энг кўп иқтибос қилинган асарлар
- Effect of Ar+-ion bombardment on the composition and structure of the surface of CoSi2/Si(111) nanofilms201523 иқтибос
- On the creation of ordered nuclei by ion bombardment for obtaining nanoscale si structures on the surface of CaF2 films201721 иқтибос
- On the synthesis of nanoscale phases of metal silicides in the near-surface region of silicon and the study of their electronic structures by passing light201721 иқтибос
- Formation and Electronic Structure of Barium-Monosilicide- and Barium-Disilicide Films202117 иқтибос
- Energy spectra of SiO2 nanofilms formed on a silicon surface by ion implantation201516 иқтибос
- Procedure for determining defects in sputtered clusters of ionic crystals201614 иқтибос
- Energy Threshold of the Atomic and Cluster Sputtering of Some Elements under Bombardment with Cs, Rb, and Na Ions201914 иқтибос
- Structure and electronic properties of nanoscale phases and nanofilms of metal silicides produced by ion implantation in combination with annealing201414 иқтибос
- Applying low-energy ion implantation in the creation of nanocontacts on the surface of ultrathin semiconductor films201314 иқтибос
- Effect of thermal and laser annealing on the atom distribution profiles in Si(111) implanted with P+ and B+ ions201712 иқтибос