K. A. Begmatov

Eng koʻp iqtibos qilingan asarlar

1. The radiation-induced defects production in P-type silicon doped by impurities of transitional elements20003 iqtibos
2. Interaction of deep impurities with radiation defects in n-Si at γ-irradiation20052 iqtibos
3. On several regularities of deep levels of d-impurities in silicon19952 iqtibos
4. Relaxation kinetics of photoconductivity in р-silicon compensated by phosphorus atoms20091 iqtibos
5. Semiconductor detector as ionising radiation dosimeter19951 iqtibos
6. Interaction of deep level impurities with radiation defects in silicon under γ -irradiation20030 iqtibos
7. Formation processes of radiation defects in silicon at high temperature irradiation20040 iqtibos

Hammualliflar

1. M. Karimov4 ta umumiy asar2000–2009
2. Sh. Makhkamov3 ta umumiy asar2004–2009
3. Sh. A. Makhmudov3 ta umumiy asar2003–2009
4. Marat S. Yunusov3 ta umumiy asar1995–2000
5. N.A. Tursunov2 ta umumiy asar2004–2009
6. A. O. Kurbanov2 ta umumiy asar2003–2005
7. Z. M. Khakimov2 ta umumiy asar2004–2005
8. A. Akhmadaliev2 ta umumiy asar1995
9. A. K. Karakhodzhaev1 ta umumiy asar2009
10. A. Kh. Sadikov1 ta umumiy asar2009

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