Asosiy kontentga oʻtish
AkademScholar
Mualliflar

M. Ashurov

Soʻnggi maʼlum muassasa:
Institute of Nuclear Physics
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h-indeks
0
i10-indeksi
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Iqtiboslar
20
Asarlar
Vaqt boʻyicha

Vaqt boʻyicha tahlil

Iqtibos sharhi

Yillar boʻyicha nashrlar (ustun) va iqtiboslar (chiziq)

  • Nashrlar
  • Iqtiboslar
013450119992001200220042006200820112017202420251999: Nashrlar 3, Iqtiboslar 02001: Nashrlar 1, Iqtiboslar 02002: Nashrlar 1, Iqtiboslar 02004: Nashrlar 1, Iqtiboslar 02006: Nashrlar 1, Iqtiboslar 02008: Nashrlar 1, Iqtiboslar 02011: Nashrlar 3, Iqtiboslar 02017: Nashrlar 1, Iqtiboslar 02024: Nashrlar 1, Iqtiboslar 02025: Nashrlar 1, Iqtiboslar 0

Nashr tarixi

0134519992001200220042006200820112017202420251999: Nashrlar 32001: Nashrlar 12002: Nashrlar 12004: Nashrlar 12006: Nashrlar 12008: Nashrlar 12011: Nashrlar 32017: Nashrlar 12024: Nashrlar 12025: Nashrlar 1

h-indeks evolyutsiyasi

Yillar boʻyicha jamlangan h-indeks

0119992001200220042006200820112017202420251999: h-indeks 02001: h-indeks 02002: h-indeks 02004: h-indeks 02006: h-indeks 02008: h-indeks 02011: h-indeks 02017: h-indeks 02024: h-indeks 02025: h-indeks 0

Eng koʻp iqtibos qilingan asarlar

  1. The investigation of charge carriers life time dependence on degree of silicon doping with admixtures creating the deep levels19950 iqtibos
  2. Investigation of degradation of the characteristics of silicon solar elements while the influence of penetrating radiation19950 iqtibos
  3. The peculiarities of behaviour of gold impurities in silicon at radiation-thermal influences19970 iqtibos
  4. The study of influence of the duration of formation of p + -layer on the process of radiation defect production in silicon structures19970 iqtibos
  5. The influence of technological regimes of the silicon solar cells production on the formation of radiation effects19970 iqtibos
  6. Investigation of Influence of Thermal and Radiation Processing on Impurity Centers in Silicon and Silicon Based Structures19980 iqtibos
  7. Characteristics of the formation of radiation defects in silicon structures19990 iqtibos
  8. The peculiarities of recombination of charge carriers in silicon with impurity-defect complexes19990 iqtibos
  9. Peculiarities of radiation defects influence on degradation of photoenergetic characteristics of silicon solar cells19990 iqtibos
  10. Formation of radiation defects in silicon structures under low-intensity electron irradiation20010 iqtibos

Hammualliflar

  1. Sh. Makhkamov13 ta umumiy asar1995–2008
  2. N.A. Tursunov13 ta umumiy asar1995–2008
  3. R.P. Saidov7 ta umumiy asar1995–2004
  4. S.V. Martynchenko7 ta umumiy asar1995–1999
  5. И. Нуритдинов4 ta umumiy asar2011–2024
  6. Maksudbek Baydjanov4 ta umumiy asar2006–2017
  7. É. M. Gasanov3 ta umumiy asar2006–2011
  8. Z. M. Khakimov3 ta umumiy asar2001–2004
  9. Б. Л. Оксенгендлер2 ta umumiy asar2011–2025
  10. Tatsuo Shikama2 ta umumiy asar2011

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