А.С. Ачилов

Eng koʻp iqtibos qilingan asarlar

1. Mechanism of current transport in Schottky barrier diodes based on coarse-grained CdTe films201216 iqtibos
2. Effect of temperature on the current transfer mechanism in the reverse I–V characteristics of the <i>n</i>-CdS/<i>i</i>-CdS_<i>x</i>Te1−x/<i>p</i>-CdTe heterostructure20236 iqtibos
3. Influence of the back contact on the electrophysical and functional characteristics of thin-film CdTe Schottky barrier detector structures20124 iqtibos
4. Gamma irradiation effect on nCdS/pCd heterostructure20080 iqtibos
5. The new detectors with Schottky barrier on the base of cadmium telluride and their some characteristics20100 iqtibos
6. Research of the real structure of the diode with barrier Schottky Al-pCdTe20100 iqtibos
7. The photosensitive structure CdTe/TeO 2 /CdO on the basis of CdTe film and thin oxide layer CdO synthesized by a magnetron-ionic dispersion method20110 iqtibos
8. Properties of the transition layer of the structure of the schottky barrier Al-CdTe-Mo20230 iqtibos

Hammualliflar

1. S. A. Muzafarova5 ta umumiy asar2008–2023
2. Ш. А. Мирсагатов5 ta umumiy asar2010–2012
3. Sharifa B. Utamuradova2 ta umumiy asar2023
4. B. N. Zaveryukhin2 ta umumiy asar2010–2012
5. Baiev2 ta umumiy asar2010
6. R. R. Kabulov1 ta umumiy asar2023
7. Kh.S. Daliev1 ta umumiy asar2023
8. A. B. Uteniyazova1 ta umumiy asar2023
9. A.K. Uteniyazov1 ta umumiy asar2012
10. М. S. Baiev1 ta umumiy asar2012

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