Kh. Kh. Boltaev

Eng koʻp iqtibos qilingan asarlar

1. Electron spectroscopy of the nanostructures created in Si, GaAs, and CaF2 surface layers using low-energy ion implantation201320 iqtibos
2. Structure and electronic properties of nanoscale phases and nanofilms of metal silicides produced by ion implantation in combination with annealing201414 iqtibos
3. Influence of ion bombardment on the profile of the depth distribution of impurity atoms in Si used for solar cells and diode structures20148 iqtibos
4. Composition and Structure of Ga1 – xNa x As Nanolayers Produced near the GaAs Surface by Na+ Implantation20177 iqtibos
5. Composition of uncontrolled impurities and their chemical states and depth profiles at the Al-Si interface20154 iqtibos
6. Injectivity and Nuclearity Properties for Real C*-Algebras20241 iqtibos
7. Analyzing the Change in the Composition of a CdTe Surface upon Implanting $$O_{2}^{ + }$$ Ions and Subsequent Annealing20241 iqtibos
8. Injectivity and Nuclearity Properties for Real C*-Algebras20210 iqtibos
9. Study of the Composition of Uncontrolled Impurities and the Profiles of Their Distribution at the Ni–CdS Interface20220 iqtibos
10. THE RELATION BETWEEN REAL AW*-FACTORS AND ANTI-AUTOMORPHISMS OF INVOLUTIVE (I.E. WITH PERIOD 2) *-(COMPLEX) AW*-FACTORS20250 iqtibos

Hammualliflar

1. Б. Е. Умирзаков5 ta umumiy asar2013–2024
2. Д. А. Ташмухамедова4 ta umumiy asar2013–2024
3. F. B. Rasulova2 ta umumiy asar2025
4. A. A. Rakhimov2 ta umumiy asar2021–2024
5. A. A. Abduvayitov2 ta umumiy asar2022–2024
6. M. E. Nurillaev2 ta umumiy asar2021–2024
7. G. Abdurakhmanov1 ta umumiy asar2024
8. G. A. Rozikov1 ta umumiy asar2022
9. J. Sh. Sodikjanov1 ta umumiy asar2017
10. А.А. Абдувайитов1 ta umumiy asar2015

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