J. B. Khujaniyozov

Eng koʻp iqtibos qilingan asarlar

1. Effect of thermal and laser annealing on the atom distribution profiles in Si(111) implanted with P+ and B+ ions201712 iqtibos
2. Theoretical Explanation of the Effect of a Decrease in the Si(111) Plasmon Energy during the Implantation of Ions with a Large Dose20203 iqtibos
3. Structure of МеSi Silicide Films (Me: Li, Rb, K and Cs) According to Electron Microscopy Data and the Diffraction of Slow Electrons20202 iqtibos
4. On the Formation of Silicide Films of Metals (Li, Cs, Rb, and Ba) During Ion Implantation in Si and Subsequent Thermal Annealing20211 iqtibos
5. Modification of structure and properties of semiconductor surface by ion implantation with active metals20000 iqtibos
6. Composition, structure and properties of WO3 powders obtained by the arc discharge method20260 iqtibos

Hammualliflar

1. А.С. Рысбаев4 ta umumiy asar2000–2021
2. A. K. Tashatov2 ta umumiy asar2000–2020
3. M.T. Normuradov2 ta umumiy asar2020
4. Б. Е. Умирзаков1 ta umumiy asar2026
5. Rashad Abaszade1 ta umumiy asar2026
6. K.B. Egamberdiyev1 ta umumiy asar2026
7. Akbarjon Abduvayitov1 ta umumiy asar2026
8. Sardor Donaev1 ta umumiy asar2026
9. S.Z. Jafarova1 ta umumiy asar2026
10. D.A. Ibrahimova1 ta umumiy asar2026

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