A. É. Atamuratov
- Soʻnggi maʼlum muassasa:
- Urgench State University
- ORCID:
- 0000-0003-2173-3783
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- Self-heating effect in nanoscale SOI Junctionless FinFET with different geometries20216 iqtibos
- The Effect of the Fin Shape and Thickness of the Buried Oxide on the DIBL Effect in an SOI FinFET20186 iqtibos
- Experimental Assessment of the Nonuniform Radiation-Induced Space-Charge Distribution in the Surface Region of Silicon20015 iqtibos
- The Self-Heating Effect in Junctionless Fin Field-Effect Transistors Based on Silicon-on-Insulator Structures with Different Channel Shapes20215 iqtibos
- Optimization of vertically stacked nanosheet FET immune to self-heating20235 iqtibos
- Simulation of DIBL effect in 25 nm SOI-FinFET with the different body shapes20174 iqtibos
- Influence of device geometry on electrical characteristics of a 10.7 nm SOI-FinFET20144 iqtibos
- Detection of a charge built in the oxide layer of a metal-oxide-semiconductor field-effect transistor by lateral C-V measurement20074 iqtibos
- Lateral Capacitance–Voltage Method of NanoMOSFET for Detecting the Hot Carrier Injection20203 iqtibos
- Characterising lateral capacitance of MNOSFET with localised trapped charge in nitride layer20183 iqtibos