Asosiy kontentga oʻtish
AkademScholar

Mahsulotlar

Ishlab chiquvchilar uchun

AkademBasetez oradaDasturchilar API
Mualliflar

A. É. Atamuratov

Soʻnggi maʼlum muassasa:
Urgench State University
ORCID:
0000-0003-2173-3783
5
h-indeks
0
i10-indeksi
62
Iqtiboslar
37
Asarlar
Vaqt boʻyicha

Vaqt boʻyicha tahlil

Iqtibos sharhi

Yillar boʻyicha nashrlar (ustun) va iqtiboslar (chiziq)

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  • Iqtiboslar
013450510152020172018201920202021202220232024202520262017: Nashrlar 2, Iqtiboslar 22018: Nashrlar 2, Iqtiboslar 12019: Nashrlar 1, Iqtiboslar 42020: Nashrlar 3, Iqtiboslar 42021: Nashrlar 4, Iqtiboslar 52022: Nashrlar 3, Iqtiboslar 132023: Nashrlar 3, Iqtiboslar 62024: Nashrlar 2, Iqtiboslar 62025: Nashrlar 5, Iqtiboslar 152026: Nashrlar 1, Iqtiboslar 5

Iqtibos tarixi

0510152020172018201920202021202220232024202520262017: Iqtiboslar 22018: Iqtiboslar 12019: Iqtiboslar 42020: Iqtiboslar 42021: Iqtiboslar 52022: Iqtiboslar 132023: Iqtiboslar 62024: Iqtiboslar 62025: Iqtiboslar 152026: Iqtiboslar 5

Nashr tarixi

0134520172018201920202021202220232024202520262017: Nashrlar 22018: Nashrlar 22019: Nashrlar 12020: Nashrlar 32021: Nashrlar 42022: Nashrlar 32023: Nashrlar 32024: Nashrlar 22025: Nashrlar 52026: Nashrlar 1

h-indeks evolyutsiyasi

Yillar boʻyicha jamlangan h-indeks

0134520172018201920202021202220232024202520262017: h-indeks 12018: h-indeks 12019: h-indeks 12020: h-indeks 22021: h-indeks 22022: h-indeks 32023: h-indeks 32024: h-indeks 32025: h-indeks 42026: h-indeks 5

Eng koʻp iqtibos qilingan asarlar

  1. Self-heating effect in nanoscale SOI Junctionless FinFET with different geometries20216 iqtibos
  2. The Effect of the Fin Shape and Thickness of the Buried Oxide on the DIBL Effect in an SOI FinFET20186 iqtibos
  3. Experimental Assessment of the Nonuniform Radiation-Induced Space-Charge Distribution in the Surface Region of Silicon20015 iqtibos
  4. The Self-Heating Effect in Junctionless Fin Field-Effect Transistors Based on Silicon-on-Insulator Structures with Different Channel Shapes20215 iqtibos
  5. Optimization of vertically stacked nanosheet FET immune to self-heating20235 iqtibos
  6. Simulation of DIBL effect in 25 nm SOI-FinFET with the different body shapes20174 iqtibos
  7. Influence of device geometry on electrical characteristics of a 10.7 nm SOI-FinFET20144 iqtibos
  8. Detection of a charge built in the oxide layer of a metal-oxide-semiconductor field-effect transistor by lateral C-V measurement20074 iqtibos
  9. Lateral Capacitance–Voltage Method of NanoMOSFET for Detecting the Hot Carrier Injection20203 iqtibos
  10. Characterising lateral capacitance of MNOSFET with localised trapped charge in nitride layer20183 iqtibos