М. К. Рузибаева
- Soʻnggi maʼlum muassasa:
- Academy of Sciences Republic of Uzbekistan
5
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- Optimum ion implantation and annealing conditions for stimulating secondary negative ion emission201119 iqtibos
- Analysis of the structure and properties of heterostructured nanofilms prepared by epitaxy and ion implantation methods201315 iqtibos
- Effect of the O+2-ion bombardment on the TiN composition and structure201513 iqtibos
- Investigation of change of the composition and structure of the CaF2/Si films surface at the low-energy bombardment201413 iqtibos
- Analysis of profiles of atomic distribution over the depth of Si-Me free nanofilm systems20155 iqtibos
- Stimulation of secondary negative ion emission by implantation of alkaline ions into the surface layer of a solid followed by heating20103 iqtibos
- Effect of Co+-ion implantation on the composition and properties of free Si–Cu nanofilm structures20173 iqtibos
- A study of the influence of surface layers’ disordering on the spectrum of energy losses of electrons passed through copper thin single crystal films20112 iqtibos
- Formation of Nanodimensional SiO2 Films on the Surface of a Free Si/Cu Film System by $${\text{O}}_{2}^{ + }$$ Ion Implantation20192 iqtibos
- A study of the orientation dependence of the electron energy loss spectra for single crystal films of copper and silver20121 iqtibos