Kh. Kh. Boltaev
- Soʻnggi maʼlum muassasa:
- Westminster International University in Tashkent
4
h-indeks
2
i10-indeksi
53
Iqtiboslar
11
Asarlar
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Eng koʻp iqtibos qilingan asarlar
- Electron spectroscopy of the nanostructures created in Si, GaAs, and CaF2 surface layers using low-energy ion implantation201319 iqtibos
- Structure and electronic properties of nanoscale phases and nanofilms of metal silicides produced by ion implantation in combination with annealing201414 iqtibos
- Influence of ion bombardment on the profile of the depth distribution of impurity atoms in Si used for solar cells and diode structures20148 iqtibos
- Composition and Structure of Ga1 – xNa x As Nanolayers Produced near the GaAs Surface by Na+ Implantation20177 iqtibos
- Composition of uncontrolled impurities and their chemical states and depth profiles at the Al-Si interface20153 iqtibos
- Injectivity and Nuclearity Properties for Real C*-Algebras20241 iqtibos
- Analyzing the Change in the Composition of a CdTe Surface upon Implanting $$O_{2}^{ + }$$ Ions and Subsequent Annealing20241 iqtibos
- Injectivity and Nuclearity Properties for Real C*-Algebras20210 iqtibos
- Study of the Composition of Uncontrolled Impurities and the Profiles of Their Distribution at the Ni–CdS Interface20220 iqtibos
- THE RELATION BETWEEN REAL AW*-FACTORS AND ANTI-AUTOMORPHISMS OF INVOLUTIVE (I.E. WITH PERIOD 2) *-(COMPLEX) AW*-FACTORS20250 iqtibos