А.С. Рысбаев

Eng koʻp iqtibos qilingan asarlar

1. The Influence of Structural Defects in Silicon on the Formation of Photosensitive Mn4Si7–Si❬Mn❭–Mn4Si7 and Mn4Si7–Si❬Mn❭–M Heterostructures201921 iqtibos
2. Formation and Electronic Structure of Barium-Monosilicide- and Barium-Disilicide Films202117 iqtibos
3. Formation of nanosize silicides films on the Si(111) and Si(100) surfaces by low-energy ion implantation201415 iqtibos
4. Effect of thermal and laser annealing on the atom distribution profiles in Si(111) implanted with P+ and B+ ions201712 iqtibos
5. Peculiarities of the electron structure of nanosized ion-implanted layers in silicon20149 iqtibos
6. On new two-dimensional structures produced on the Si (111) and Si (100) surface upon molecular-beam epitaxy of cobalt and silicon20113 iqtibos
7. Theoretical Explanation of the Effect of a Decrease in the Si(111) Plasmon Energy during the Implantation of Ions with a Large Dose20203 iqtibos
8. Influence of structural defects in silicon on formation of photosensitive heterostructures Mn4Si7-Si-Mn4Si7 and Mn4Si7-Si-M20183 iqtibos
9. Change of electrophysical properties of the Si(111) and Si(100) surface in the process of ion implantation and next annealing20192 iqtibos
10. Thin silicide films: producing and properties20042 iqtibos