Asosiy kontentga oʻtish
AkademScholar

Mahsulotlar

Ishlab chiquvchilar uchun

AkademBasetez oradaDasturchilar API
Mualliflar

А. Yusupov

Soʻnggi maʼlum muassasa:
Tashkent University of Information Technology
ORCID:
0000-0001-7967-0098
5
h-indeks
0
i10-indeksi
52
Iqtiboslar
28
Asarlar
Vaqt boʻyicha

Vaqt boʻyicha tahlil

Iqtibos sharhi

Yillar boʻyicha nashrlar (ustun) va iqtiboslar (chiziq)

  • Nashrlar
  • Iqtiboslar
013450510152020172018201920202021202220232024202520262017: Nashrlar 2, Iqtiboslar 12018: Nashrlar 2, Iqtiboslar 02019: Nashrlar 1, Iqtiboslar 32020: Nashrlar 1, Iqtiboslar 42021: Nashrlar 4, Iqtiboslar 32022: Nashrlar 5, Iqtiboslar 72023: Nashrlar 2, Iqtiboslar 92024: Nashrlar 1, Iqtiboslar 42025: Nashrlar 2, Iqtiboslar 132026: Nashrlar 0, Iqtiboslar 5

Iqtibos tarixi

0510152020172018201920202021202220232024202520262017: Iqtiboslar 12018: Iqtiboslar 02019: Iqtiboslar 32020: Iqtiboslar 42021: Iqtiboslar 32022: Iqtiboslar 72023: Iqtiboslar 92024: Iqtiboslar 42025: Iqtiboslar 132026: Iqtiboslar 5

Nashr tarixi

0134520172018201920202021202220232024202520262017: Nashrlar 22018: Nashrlar 22019: Nashrlar 12020: Nashrlar 12021: Nashrlar 42022: Nashrlar 52023: Nashrlar 22024: Nashrlar 12025: Nashrlar 22026: Nashrlar 0

h-indeks evolyutsiyasi

Yillar boʻyicha jamlangan h-indeks

0134520172018201920202021202220232024202520262017: h-indeks 12018: h-indeks 12019: h-indeks 12020: h-indeks 22021: h-indeks 22022: h-indeks 32023: h-indeks 32024: h-indeks 32025: h-indeks 42026: h-indeks 5

Eng koʻp iqtibos qilingan asarlar

  1. Self-heating effect in nanoscale SOI Junctionless FinFET with different geometries20216 iqtibos
  2. Increasing Die Durability in Cold Stamping by Quenching with Intermediate Tempering20226 iqtibos
  3. The Effect of the Fin Shape and Thickness of the Buried Oxide on the DIBL Effect in an SOI FinFET20186 iqtibos
  4. Experimental Assessment of the Nonuniform Radiation-Induced Space-Charge Distribution in the Surface Region of Silicon20015 iqtibos
  5. The Self-Heating Effect in Junctionless Fin Field-Effect Transistors Based on Silicon-on-Insulator Structures with Different Channel Shapes20215 iqtibos
  6. Simulation of DIBL effect in 25 nm SOI-FinFET with the different body shapes20174 iqtibos
  7. Characterising lateral capacitance of MNOSFET with localised trapped charge in nitride layer20183 iqtibos
  8. Anomalous Behavior of Lateral C–V Characteristic of an MNOS Transistor with an Embedded Local Charge in the Nitride Layer20193 iqtibos
  9. The effect of geometrical sizes on efficiency of vertical silicon tunnel junction solar cell for high solar concentration20222 iqtibos
  10. The contribution of gate and drain voltages to temperature distribution along the channel in 2D MoS<sub>2</sub> based MOSFET20212 iqtibos