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Ishlab chiquvchilar uchun

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Mualliflar

Kh. N. Juraev

Ism variantlari: Kh.N. Juraev · Khimmatali Juraev

Soʻnggi maʼlum muassasa:
Tashkent Institute of Irrigation and Agricultural Mechanization Engineers
ORCID:
0000-0001-8963-3848
5
h-indeks
1
i10-indeksi
60
Iqtiboslar
27
Asarlar
Vaqt boʻyicha

Vaqt boʻyicha tahlil

Iqtibos sharhi

Yillar boʻyicha nashrlar (ustun) va iqtiboslar (chiziq)

  • Nashrlar
  • Iqtiboslar
0358100510152020162017201820202021202220232024202520262016: Nashrlar 1, Iqtiboslar 02017: Nashrlar 1, Iqtiboslar 32018: Nashrlar 2, Iqtiboslar 72020: Nashrlar 1, Iqtiboslar 52021: Nashrlar 2, Iqtiboslar 12022: Nashrlar 2, Iqtiboslar 32023: Nashrlar 1, Iqtiboslar 102024: Nashrlar 4, Iqtiboslar 102025: Nashrlar 8, Iqtiboslar 132026: Nashrlar 3, Iqtiboslar 7

Iqtibos tarixi

0510152020162017201820202021202220232024202520262016: Iqtiboslar 02017: Iqtiboslar 32018: Iqtiboslar 72020: Iqtiboslar 52021: Iqtiboslar 12022: Iqtiboslar 32023: Iqtiboslar 102024: Iqtiboslar 102025: Iqtiboslar 132026: Iqtiboslar 7

Nashr tarixi

03581020162017201820202021202220232024202520262016: Nashrlar 12017: Nashrlar 12018: Nashrlar 22020: Nashrlar 12021: Nashrlar 22022: Nashrlar 22023: Nashrlar 12024: Nashrlar 42025: Nashrlar 82026: Nashrlar 3

h-indeks evolyutsiyasi

Yillar boʻyicha jamlangan h-indeks

0134520162017201820202021202220232024202520262016: h-indeks 12017: h-indeks 12018: h-indeks 22020: h-indeks 32021: h-indeks 32022: h-indeks 32023: h-indeks 42024: h-indeks 42025: h-indeks 52026: h-indeks 5

Eng koʻp iqtibos qilingan asarlar

  1. Energy Levels in Nanowires and Nanorods with a Finite Potential Well202011 iqtibos
  2. Theoretical analysis of incomplete ionization on the electrical behavior of radial <i>p-n</i> junction structures20259 iqtibos
  3. Peculiarities of the Temperature Dependence of the Chemical Potential of a Two-dimensional Electron Gas in Magnetic Field20228 iqtibos
  4. Concentration, thermodynamic density of states, and entropy of electrons in semiconductor nanowires20227 iqtibos
  5. Nonequilibrium Diffusion of Boron in SiC at Low Temperatures20105 iqtibos
  6. Influence of Defects on Low Temperature Diffusion of Boron in SiC20114 iqtibos
  7. Fast Switching 4<i>H</i>-SiC<i> P-i-n</i> Structures Fabricated by Low Temperature Diffusion of Al20174 iqtibos
  8. Growth of transparent electrical conducting films of indium and tin oxides by chemical vapor deposition20164 iqtibos
  9. Research of <i>p</i>‐<i>i</i>‐<i>n</i> Junctions Based on 4<i>H</i>‐SiC Fabricated by Low‐Temperature Diffusion of Boron20182 iqtibos
  10. Spectral Dependence of Optical Absorption of 4<i>H</i>-SiC Doped with Boron and Aluminum20181 iqtibos