Kh.S. Daliev
- Soʻnggi maʼlum muassasa:
- National University of Uzbekistan
- ORCID:
- 0000-0002-2164-6797
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- Features of the behavior of lanthanum and hafnium atoms in silicon20069 iqtibos
- Raman spectroscopy of silicon, doped with platinum and irradiated by protons20239 iqtibos
- Influence of the parameters to transition capacitance at NCDS-PSI heterostructure20239 iqtibos
- Thermally Induced Deep Centers in Silicon Doped with Europium or Lanthanum20018 iqtibos
- The Influence of the Impurities with Deep Levels on the Iron Behavior in Silicon19974 iqtibos
- Defect Formation in MIS Structures Based on Silicon with an Impurity of Ytterbium20243 iqtibos
- Defect Structure of Silicon Doped with Erbium20243 iqtibos
- Changes in the Structure and Properties of Silicon During Ytterbium Doping: The Results of o Comprehensive Analysis20242 iqtibos
- Properties of Single Crystal Silicon Doped with Vanadium20241 iqtibos
- Influence of the Temperature and Cyclic Deformations of (BixSb1–x)2Te3 Films on Their Resistance20211 iqtibos