Jonibek Sh. Abdullayev

Eng koʻp iqtibos qilingan asarlar

1. Mathematical Modeling of Incomplete Ionization in Radial p-Si/n-GaAs Heterojunctions: Temperature and Doping Effects20257 iqtibos
2. Modeling of Optoelectronic Properties in pSi/n-CdmZn1−mS Heterojunctions: Effects of Composition and Temperature20256 iqtibos
3. Holomorphic continuation into a matrix ball of functions defined on a piece of its skeleton20215 iqtibos
4. Thermal Expansion Characteristics of Planar and Radial Si/GaAs p–n Heterojunctions20264 iqtibos
5. Cryogenic Material and Electrophysical Changes in Si and GaAs20264 iqtibos
6. Laplace and Hua Luogeng Operators20203 iqtibos
7. Relationship Between the Bergman and Cauchy-Szeg¨o Ker- nels in the Domains + (n -1) and ℜn I V20203 iqtibos
8. Functional Properties of the Bergman Kernel in the Space $${{\boldsymbol{\mathbb{C}}}^{\boldsymbol{n}}}\boldsymbol{[m\times m]}$$20252 iqtibos
9. Synthesis and characterization by experimental and theory research suitable on the CdS and CdO materials20232 iqtibos
10. Influence of the parameters to transition capacitance at nCdS-pSi heterostructure20232 iqtibos