Asosiy kontentga oʻtish
AkademScholar
Muassasalar

Institute of Semiconductor Physics

Nom variantlari: ISP SBRAS · Федеральное государственное бюджетное учреждение науки Институт физики полупроводников им. А.В. Ржанова Сибирского отделения Российской академии наук

Davlat:
RU
ROR:
https://ror.org/03napcw37
4
h-indeks
86
Iqtiboslar
45
Asarlar
90
Mualliflar
Vaqt boʻyicha

Vaqt boʻyicha tahlil

Iqtibos sharhi

Yillar boʻyicha nashrlar (ustun) va iqtiboslar (chiziq)

  • Nashrlar
  • Iqtiboslar
013450510152020172018201920202021202220232024202520262017: Nashrlar 1, Iqtiboslar 22018: Nashrlar 3, Iqtiboslar 02019: Nashrlar 2, Iqtiboslar 32020: Nashrlar 2, Iqtiboslar 42021: Nashrlar 2, Iqtiboslar 92022: Nashrlar 0, Iqtiboslar 142023: Nashrlar 1, Iqtiboslar 92024: Nashrlar 1, Iqtiboslar 152025: Nashrlar 0, Iqtiboslar 92026: Nashrlar 0, Iqtiboslar 4

Iqtibos tarixi

0510152020172018201920202021202220232024202520262017: Iqtiboslar 22018: Iqtiboslar 02019: Iqtiboslar 32020: Iqtiboslar 42021: Iqtiboslar 92022: Iqtiboslar 142023: Iqtiboslar 92024: Iqtiboslar 152025: Iqtiboslar 92026: Iqtiboslar 4

Nashr tarixi

0134520172018201920202021202220232024202520262017: Nashrlar 12018: Nashrlar 32019: Nashrlar 22020: Nashrlar 22021: Nashrlar 22022: Nashrlar 02023: Nashrlar 12024: Nashrlar 12025: Nashrlar 02026: Nashrlar 0

h-indeks evolyutsiyasi

Yillar boʻyicha jamlangan h-indeks

0134520172018201920202021202220232024202520262017: h-indeks 22018: h-indeks 22019: h-indeks 22020: h-indeks 22021: h-indeks 32022: h-indeks 32023: h-indeks 32024: h-indeks 32025: h-indeks 32026: h-indeks 4

Eng koʻp iqtibos qilingan asarlar

  1. The Mechanism of Silicon Epitaxial Layer Growth from Ion-Molecular Beams19792 iqtibos
  2. A Study of Defects in Heat Treated Cz-Silicon by Positron Annihilation19901 iqtibos
  3. Using single-photon detectors for quantum key distribution in an experimental fiber-optic communication system20091 iqtibos
  4. Spectral and magneto-optical studies concerning the magnetic-phase diagram of (Gd, Tb, Er)3(Al,Fe)5O12 at low temperatures19750 iqtibos
  5. Impurity distribution in natural diamond crystals19820 iqtibos
  6. Radiative Recombination at Centres in Germanium–Silicon Solid Solutions19850 iqtibos
  7. Properties of SiC on Si Substrate Films Obtained Using the Plasma-Chemical Method19910 iqtibos
  8. Formation of Thermal Donors in Czochralski Grown Silicon Under Hydrostatic Pressure Up to 1 GPa19960 iqtibos
  9. Advanced Heterostructure Si-InSb on Insulator Formed by Bonding of Hydrogen Transferred Si Layer and Implanted SiO2 Film20070 iqtibos
  10. Nanoscaled Silicon Based Heterostructures Formed by Interface Mediated Endotaxy20070 iqtibos