Institute of Semiconductor Physics
Nom variantlari: ISP SBRAS · Федеральное государственное бюджетное учреждение науки Институт физики полупроводников им. А.В. Ржанова Сибирского отделения Российской академии наук
- Davlat:
- RU
4
h-indeks
86
Iqtiboslar
45
Asarlar
90
Mualliflar
Vaqt boʻyicha
Vaqt boʻyicha tahlil
Iqtibos sharhi
Yillar boʻyicha nashrlar (ustun) va iqtiboslar (chiziq)
- Nashrlar
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Iqtibos tarixi
Nashr tarixi
h-indeks evolyutsiyasi
Yillar boʻyicha jamlangan h-indeks
Eng koʻp iqtibos qilingan asarlar
- The Mechanism of Silicon Epitaxial Layer Growth from Ion-Molecular Beams19792 iqtibos
- A Study of Defects in Heat Treated Cz-Silicon by Positron Annihilation19901 iqtibos
- Using single-photon detectors for quantum key distribution in an experimental fiber-optic communication system20091 iqtibos
- Spectral and magneto-optical studies concerning the magnetic-phase diagram of (Gd, Tb, Er)3(Al,Fe)5O12 at low temperatures19750 iqtibos
- Impurity distribution in natural diamond crystals19820 iqtibos
- Radiative Recombination at Centres in Germanium–Silicon Solid Solutions19850 iqtibos
- Properties of SiC on Si Substrate Films Obtained Using the Plasma-Chemical Method19910 iqtibos
- Formation of Thermal Donors in Czochralski Grown Silicon Under Hydrostatic Pressure Up to 1 GPa19960 iqtibos
- Advanced Heterostructure Si-InSb on Insulator Formed by Bonding of Hydrogen Transferred Si Layer and Implanted SiO2 Film20070 iqtibos
- Nanoscaled Silicon Based Heterostructures Formed by Interface Mediated Endotaxy20070 iqtibos