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V.E. Lashkaryov Institute of Semiconductor Physics

Nom variantlari: ISP · V.Ye. Lashkaryov Institute of Semiconductor Physics · Інститут фізики напівпровідників ім. В.Є. Лашкарьов

Davlat:
UA
ROR:
https://ror.org/01qfgm256
3
h-indeks
42
Iqtiboslar
23
Asarlar
91
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Iqtibos sharhi

Yillar boʻyicha nashrlar (ustun) va iqtiboslar (chiziq)

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01203581020162018201920202021202220232024202520262016: Nashrlar 2, Iqtiboslar 02018: Nashrlar 1, Iqtiboslar 02019: Nashrlar 2, Iqtiboslar 32020: Nashrlar 1, Iqtiboslar 32021: Nashrlar 0, Iqtiboslar 32022: Nashrlar 0, Iqtiboslar 52023: Nashrlar 0, Iqtiboslar 22024: Nashrlar 0, Iqtiboslar 62025: Nashrlar 0, Iqtiboslar 92026: Nashrlar 0, Iqtiboslar 1

Iqtibos tarixi

03581020162018201920202021202220232024202520262016: Iqtiboslar 02018: Iqtiboslar 02019: Iqtiboslar 32020: Iqtiboslar 32021: Iqtiboslar 32022: Iqtiboslar 52023: Iqtiboslar 22024: Iqtiboslar 62025: Iqtiboslar 92026: Iqtiboslar 1

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01220162018201920202021202220232024202520262016: Nashrlar 22018: Nashrlar 12019: Nashrlar 22020: Nashrlar 12021: Nashrlar 02022: Nashrlar 02023: Nashrlar 02024: Nashrlar 02025: Nashrlar 02026: Nashrlar 0

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Yillar boʻyicha jamlangan h-indeks

0134520162018201920202021202220232024202520262016: h-indeks 22018: h-indeks 22019: h-indeks 22020: h-indeks 22021: h-indeks 22022: h-indeks 22023: h-indeks 22024: h-indeks 22025: h-indeks 32026: h-indeks 3

Eng koʻp iqtibos qilingan asarlar

  1. Influence of deposition conditions on the antireflection properties of diamond-like carbon films for Si-based solar cells20062 iqtibos
  2. Characteristics of 6H-SiC Bipolar JTE Diodes Realized by Sublimation Epitaxy and Al Implantation20041 iqtibos
  3. <title>Molecular-beam epitaxial growth of CdZnTe/ZnTe QW structures and superlattices on GaAs (100) substrates for optoelectronics</title>19990 iqtibos
  4. <title>Depth inhomogeneity of ZnTe, CdZnTe, ZnSe epilayers grown on (001)GaAs of MBE</title>19990 iqtibos
  5. Structural, Electrical and Optical Properties of Bulk 4H and 6H p-Type SiC20000 iqtibos
  6. <title>Effect of irradiation on quantum-size layer properties grown on semi-insulating GaAs</title>20030 iqtibos
  7. Solar cells of Al x Ga 1-x As/GaAs-type with microrelief boundary20040 iqtibos
  8. Photoconverters based on gallium arsenide diffused p-n junctions formed on a microprofile GaAs surface20090 iqtibos
  9. Features of the Formation of Ohmic Contacts to n+-InN20190 iqtibos