V.E. Lashkaryov Institute of Semiconductor Physics
Nom variantlari: ISP · V.Ye. Lashkaryov Institute of Semiconductor Physics · Інститут фізики напівпровідників ім. В.Є. Лашкарьов
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3
h-indeks
42
Iqtiboslar
23
Asarlar
91
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Eng koʻp iqtibos qilingan asarlar
- Influence of deposition conditions on the antireflection properties of diamond-like carbon films for Si-based solar cells20062 iqtibos
- Characteristics of 6H-SiC Bipolar JTE Diodes Realized by Sublimation Epitaxy and Al Implantation20041 iqtibos
- <title>Molecular-beam epitaxial growth of CdZnTe/ZnTe QW structures and superlattices on GaAs (100) substrates for optoelectronics</title>19990 iqtibos
- <title>Depth inhomogeneity of ZnTe, CdZnTe, ZnSe epilayers grown on (001)GaAs of MBE</title>19990 iqtibos
- Structural, Electrical and Optical Properties of Bulk 4H and 6H p-Type SiC20000 iqtibos
- <title>Effect of irradiation on quantum-size layer properties grown on semi-insulating GaAs</title>20030 iqtibos
- Solar cells of Al x Ga 1-x As/GaAs-type with microrelief boundary20040 iqtibos
- Photoconverters based on gallium arsenide diffused p-n junctions formed on a microprofile GaAs surface20090 iqtibos
- Features of the Formation of Ohmic Contacts to n+-InN20190 iqtibos