Physical Sciences and Technology
- ISSN:
- 2409-6121
3
h-indeks
25
Iqtiboslar
14
Asarlar
0.43
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Eng koʻp iqtibos qilingan asarlar
- Modeling and calibration of electrical features of p-n junctions based on Si and GaAs20249 iqtibos
- Clusters of impurity nickel atoms and their migration in the crystal lattice of silicon20237 iqtibos
- The High-temperature analysis of silicon properties with manganese-oxygen binary complexes20243 iqtibos
- The Physical mechanisms of gettering properties of nickel clusters in silicon solar cells20242 iqtibos
- Obtaining manganese silicide films on a silicon substrate by the diffusion method20222 iqtibos
- Determination of the resistance of external parameters to the degradation of the parameters of silicon photocells with input nickel atoms20221 iqtibos
- Optimal regime of the double-sided drift of lithium ions into silicon monocrystal20231 iqtibos
- SN2017ein: bolometric light curve and physical parameters20170 iqtibos
- The fundamental equation of the field theory in De Sitter pulse space20190 iqtibos
- Diamond films obtained on silicone substrates by the CVD method and properties of structures based on them20230 iqtibos